Topologically Rectangular Finite Element Grids in the Parallel Simulation of Semiconductor Devices
نویسنده
چکیده
The development of parallel device simulators is a widely accepted method for overcoming the speed and memory restrictions of a single processor system [1]. This is particularly important for 3D problems [2] where the speed of existing 3D single-processor simulators significantly restricts their use in practical device design. To achieve maximum speed-up and efficiency, parallel code design should reflect the architecture of the parallel platform, while remaining scalable and portable in this changing world of parallel systems.
منابع مشابه
Parallel Semiconductor Device Simulation: from Power to ‘Atomistic’ Devices
This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We describe the spatial domain decomposition approach adopted in the simulation of various devices, the generation of structured topologically rectangular 2D and 3D finite element grids and the optimisation ...
متن کاملOptimization of an ultra-high-resolution rectangular pixelated parallel-hole collimator with a CZT pixelated semiconductor detector for HiRe-SPECT system
Introduction: In nuclear medicine, the use of a pixelated semiconductor detector such as CZT is an of growing interest for introducing new devices. Especially, the spatial resolution can be improved by using a pixelated parallel-hole collimator with equal holes and pixel sizes based on the pixelated detector. The purpose of this study was to compare the effect of pixelated and ...
متن کاملDynamics of nonlinear rectangular plates subjected to an orbiting mass based on shear deformation plate theory
In this paper, transverse and longitudinal vibration of nonlinear plate under exciting of orbiting mass is considered based on first-order shear deformation theory. The nonlinear governing equation of motion are discretized by the finite element method in combination with Newmark’s time integration scheme under von Karman strain-displacement assumptions. For validation of method and formulation...
متن کاملSemiconductor Device Simulation by a New Method of Solving Poisson, Laplace and Schrodinger Equations (RESEARCH NOTE)
In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...
متن کاملNumerical Modeling and Experimental Study of Probe-Fed Rectangular Dielectric Resonator Antenna (RDRA) Supported by Finite Circular Ground Plane
Dielectric Resonator Antennas (DRAs) have received increased interest in recent years for their potential applications in microwave and millimeter wave communication systems. DRAs are normally used with the support of a ground plane. The radiation and impedance properties therefore depend not only on their physical dimensions and dielectric properties, but also on the size of the ground plane. ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1996